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Biblio

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2014
First-principles study of atomic structures and electronic properties of ultrathin Bi films on Ge(111), Hsu, Chia-Hsiu, Chang Hua-Rong, Chuang Feng-Chuan, Liu Yu-Tzu, Huang Zhi-Quan, Lin Hsin, Ozolinš Vidvuds, and Bansil Arun , Surface Science, 08/2014, Volume 626, p.68–75, (2014)
Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators, Chou, Bo-Hung, Huang Zhi-Quan, Hsu Chia-Hsiu, Chuang Feng-Chuan, Liu Yu-Tzu, Lin Hsin, and Bansil Arun , New Journal of Physics, 11/2014, Volume 16, p.115008, (2014)
Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Bilayers of Group III Elements with Bi, Chuang, Feng-Chuan, Yao Liang-Zi, Huang Zhi-Quan, Liu Yu-Tzu, Hsu Chia-Hsiu, Das Tanmoy, Lin Hsin, and Bansil Arun , Nano Letters, 05/2014, Volume 14, Number 5, p.2505–2508, (2014)
Strain driven topological phase transitions in atomically thin films of group IV and V elements in the honeycomb structures, Huang, Zhi-Quan, Hsu Chia-Hsiu, Chuang Feng-Chuan, Liu Yu-Tzu, Lin Hsin, Su Wan-Sheng, Ozolinš Vidvuds, and Bansil Arun , New Journal of Physics, 10/2014, Volume 16, p.105018, (2014)
Tunable topological electronic structure of silicene on a semiconducting Bi/Si(111)-root 3x root 3 substrate, Huang, Zhi-Quan, Chou Bo-Hung, Hsu Chia-Hsiu, Chuang Feng-Chuan, Lin Hsin, and Bansil Arun , Physical Review B, 12/2014, Volume 90, Number 24, p.245433, (2014)

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