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Electronic Devices at the Atomic Limit

Bent Weber (Monash University, Australia)
Thu, 14/04/2016 - 2:30pm to 3:30pm
CA2DM Theory Common (S16-06)
Shaffique Adam
Event Type: 


One of the most intriguing directions in Nanotechnology is the manipulation of individual atoms in the solid state to create functional atomic-scale electronic devices. I will show that such devices can be fabricated using scanning tunnelling microscopy (STM), and that their electronic properties can be made accessible by STM and electron transport measurements down to sub-Kelvin temperatures.

To this end I will introduce a range of atomic-scale silicon devices, fabricated by a unique combination of STM hydrogen lithography, phosphorus delta-doping and molecular beam epitaxy. Building up from basic components such as atomic-scale wiring and few-atom quantum dots, I will show how these structures can be integrated to construct complex circuits allowing the time-resolved electrical detection individual electron spins for silicon quantum information processing.

I will provide a brief outlook on progress towards the atomic-scale nanostructuring of next- generation electronic materials such as graphene and the layered transition metal dichalcogenides (TMDCs).

Speaker's bio

Bent received his Ph.D. from the University of New South Wales (UNSW) in Sydney, Australia. As part of the Centre for Quantum Computation and Communication Technology (CQC2T), he has made contributed to the development of an atomic-precision fabrication scheme for the engineering of atomic-scale electronic devices for spin-based quantum information processing. In his current role at the Centre for Atomically Thin Materials (MCATM), Monash University, Bent is applying his expertise in atomic-scale nanostructuring to the next generation electronic materials graphene and the layered transition metal dichalcogenides (TMDCs). In this role he has recently been awarded with the Discovery Early Career Researcher Award (DECRA) fellowship by the Australian Research Council (ARC).

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