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Graphene Barristor: its potential and limits

Speaker: 
Hyun-Jong Chung (Dept. Physics, Konkuk University, Korea)
Date: 
Wed, 04/12/2013 - 2:00pm to 3:00pm
Location: 
S13-M01-11 (Physics Conference Room)
Host: 
Barbaros Özyilmaz
Event Type: 
Seminars

Abstract

Since its gapless band structure keeps from turning-off the devices in traditional way, until recently, applications for the graphene transistors are limited to analog amplifiers which does not have to be turned off during the operation. Last year new device structures have been proposed to solve the issue: graphene barristor [1] and graphene tunneling transistor [2]. Both structures have hetero junction between graphene and semiconductor or insulator. In this talk, the research on graphene transistors will be reviewed towards RF (Radio Frequency) applications and also the research on graphene barristor or tunneling transistor will be reviewed towards logic applications. Finally, their potentials and limits as the next generation devices will be discussed.

[1] H. Yang, J. Heo, S. Science, 336, 1140-1143 (2012)
[2] L. Britnell, R. V. Gorbachev, R. Jalil, et al., Science, 335, 947-950 (2012)

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