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Nanomaterials for Flexible and Transparent Electronics: Graphene and Silicon Nanomembrane

Jong-Hyun Ahn (Yonsei University, Republic of Korea)
Wed, 14/01/2015 - 12:45pm to 1:30pm
Physics Conference Room (S13-M01-11)
Barbaros Özyilmaz
Event Type: 


With the emergence of unusual format electronics such as flexible and wearable devices, an effort has been made to integrate devices with various functions in smart clothing for providing enhanced flexibility and convenience for the users. Thus, many experts believe that an important future in electronics is with systems that avoid the rigid, brittle and planar nature of existing classes of electronics, to enable new applications. However, it is very difficult to accomplish such electronics with conventional electronic materials. Graphene, the thinnest elastic material, has superb electronic properties that make it a promising host for device applications. In particular, graphene has an extremely good mechanical property, offering a great opportunity to flexible and stretchable electronics that should maintain a stable operation under a high strain. The recent advances in large-scale synthesis of graphene films by chemical vapour deposition are expected to enable various macroscopic applications such as semiconducting and transparent conducting films useful for flexible and stretchable electronics. In addition, to overcome the limitation of conventional materials, we developed the fabrication method of ultra-thin Si nanomembrane with thickness of nanometer scale from a single crystal wafer using the top town process. The resulting materials display outstanding electrical, optical and mechanical properties for high performance flexible and transparent electronics.

1. J.-H. Ahn et al., "Graphene for displays that bend", Nature Nanotechnology, 9, 737 (2014)
2. J.-H. Ahn et al., "Graphene Based Conformal Devices", ACS Nano, 8(8), 7655 (2014)
3. J.-H. Ahn et al., "Quantum Confinement Effects in Transferrable Silicon Nanomembranes and Their Applications on Unusual Substrates", Nano Lett., 13, 5600, (2013).

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