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Properties of graphene antidot lattices

Thomas G. Pedersen (Aalborg University, Denmark)
Tue, 17/09/2013 - 11:00am to 12:00pm
S13-M01-11 (Physics Conference Room)
Feng Yuan Ping
Event Type: 


The vanishing band gap of graphene severely restricts application in electronic and optoelectronic devices. Recently, graphene antidot lattices (GALs) have been suggested as a means of creating sizeable gaps. These structures are based on either periodic arrays of perforations [1,2] or patterned adsorption of hydrogen [3]. The properties of both types of GALs are analyzed based on atomistic simulations (tight-binding, DFT and DFT based tight-binding) as well as continuum approaches. The influence of superlattice geometry on band gap is discussed and simple scaling laws are explained. The properties of GALs can be tuned by geometry and results for optical, magnetic and transport properties will be presented. Calculations demonstrate that transport gaps open even for structures having only a few rows of perforations. Finally, we discuss the magnetic response of GALs and the possibility of observing Hofstadter butterfly spectra and band gap quenching.

1. T. G. Pedersen, C. Flindt, J. Pedersen, A-P. Jauho, N.A. Mortensen and K. Pedersen “Graphene antidot lattices - designed defects and spin qubits”, Phys. Rev. Lett. 100, 136804 (2008).
2. J. A. Fürst, J.G. Pedersen, C. Flindt, N.A. Mortensen, M. Brandbyge, T. G. Pedersen, and A-P. Jauho “Electronic structure of graphene antidot lattices”, New J. Phys. 11, 095020 (2009).
3. R. Balog, B. Jørgensen, L. Nilsson, M. Andersen, E. Rienks, M. Bianchi, M. Fanetti, E. Lægsgaard, A. Baraldi, S. Lizzit, Z. Sljivancanin, F. Besenbacher, B. Hammer, T. G. Pedersen, P. Hofmann, and L. Hornekær, “Band Gap Opening in Graphene Induced by Patterned Hydrogen Adsorption”, Nature Materials 9, 315 (2010).

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