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Scattering by periodic defect lines in graphene

Speaker: 
J. N. B. Rodrigues
Date: 
Wed, 17/07/2013 - 11:00am to 12:00pm
Location: 
S13-M01-11 (Physics Conference Room)
Host: 
Shaffique Adam
Event Type: 
Seminars

Abstract

Recently, Tsen et al. [1] demonstrated how one can probe the electronic transport properties of a single grain boundary in graphene. Following this remarkable possibility, in this seminar we will investigate the electronic transport across periodic defect lines. In the continuum low-energy limit, such defects act as infinitesimally thin stripes separating two regions where the Dirac Hamiltonian governs the low-energy phenomena. The behavior of these systems is controlled by the boundary condition imposed by the defect on the massless Dirac fermions.

We will demonstrate how this low-energy boundary condition can be computed from the tight-binding model of the defect line. We will illustrate this procedure by considering a simple zigzag oriented defect line solely composed by pentagonal carbon rings: the pentagon-only defect line. The recently observed zz(558) defect line [2], as well as the zz(5757) defect line will also be considered [3,4].

[1] A. W. Tsen, L. Brown, M. P. Levendorf, F. Ghahari, P. Y. Huang, R. W. Havener, C. S. Ruiz-Vargas, D. A. Muller, P. Kim and J. Park, Science 336, 1143 (2012).
[2] J. Lahiri, Y. Lin, P. Bozkurt, I. I. Oleynik and M. Batzill, Nature Nanotechnology 5, 326 (2010).
[3] J. N. B. Rodrigues, N. M. R. Peres and J. M. B. Lopes dos Santos, PRB 86, 214206 (2012).
[4] J. N. B. Rodrigues, N. M. R. Peres and J. M. B. Lopes dos Santos, JPCM 25, 075303 (2013).

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