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Transport through graphene nanostructures

Klaus Ensslin (ETH Zurich)
Thu, 28/11/2013 - 11:00am to 12:00pm
S13-M01-11 (Physics Conference Room)
Antonio Castro Neto
Event Type: 

Transport experiments through graphene nanoribbons prepared both on SiO substrates as well as on BN substrates show that edge disorder is most likely the dominant disorder mechanism giving rise to the observed transport gap around the Dirac point. Graphene nanostructures deposited on AlGaAs heterostructures allow the tuning of both electronic systems with respect to each other. Such systems may be useful for sensitive charge detection and for better characterization of disorder in graphene nanostructures. Bilayer graphene has been prepared between two layers of BN and high mobilities have been achieved as documented by the observation of broken symmetry states in the quantum Hall effect. We discuss the prospects of local split gates on bilayer graphene giving rise to locally gapped regions for the realization of tunable electronic nanostructures.
This work was done in collaboration with D.Bischoff, T. Ihn, C. Rössler, P. Simonet, and A. Varlet.

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